Tampa, Florida (November 6, 2018) – Modelithics has recently been named as a partner in the Qorvo-led team that was recently awarded an Air Force Research Lab (AFRL) contract related to Broad Area Announcement (BAA) solicitation titled “Engineering Predictable Behavior into GaN Devices Foundational Engineering Problem (FEP).” The Qorvo team includes Modelithics, University of Padova, HRL, University of Colorado and NI AWR. The goal of the project is to develop an advanced GaN device modeling frame work that accounts for aging and reliability effects along with electrical performance, thermal and mechanical considerations and material variations. The resulting models are intended to add the ability to consider aging and reliability factors at the RF design (EDA simulation and optimization) process.
The proposed approach for the project is to combine physics-based modeling fundamentals, for the first-time to include aging and reliability predictability, with computationally efficient compact modeling processes. Modelithics brings expertise in both areas as a part of this team. Modelithics has been the industry leader in RF and microwave device characterization and model development for over 17 years, developing and advancing all types of modeling techniques. Modelithics has extensive experience in GaN modeling and has produced or contributed to many papers, presentations, etc. related to advanced GaN models and modeling. The new physics-based GaN model format will be effective in enabling designers to consider additional dimensions of both short and long-term device performance and have the freedom to explore a much higher degree of device geometry scalability during circuit optimizations with multiple EDA simulation tools.
The total project length is approximately 4 years. Contact Modelithics at email@example.com for more information.
About Modelithics, Inc.
Modelithics, Inc. (www.Modelithics.com) was formed in 2001 to address the industry-wide need for high-accuracy RF and microwave active and passive simulation models for use in Electronic Design Automation (EDA). Modelithics’ premium product is the Modelithics® COMPLETE Library, which includes the CLR Library™, containing measurement-based Microwave Global Models™ for a multitude of commercially-available passive component families, the NLD Library™ (non-linear diode models) the NLT Library™ (non-linear transistor models), and the SLC Library™ (system level component models). The new Modelithics COMPLETE+3D component library is also available to enable full-wave EM simulations of components, connectors and packages within ANSYS HFSS. Modelithics’ services also address a wide range of custom RF and microwave measurement and modeling needs. Modelithics® is a registered trademark of Modelithics, Inc. Microwave Global Models™, CLR Library™, NLD Library™, NLT Library™, and the SLC Library™ are also trademarks of Modelithics, Inc. The Modelithics Vendor Partner Program allows for collaboration and open communication during the development of advanced data sets and models for commercially available microwave components and devices, with flexible sponsorship and distribution arrangements for the resulting data and models. An example of such an arrangement is the Modelithics Qorvo GaN Library, a fully sponsored library distributed for free by Modelithics under sponsorship of Qorvo®.
About Qorvo’s Infrastructure & Defense (IDP) product group:
Qorvo IDP is the leading GaN RF supplier for the defense and cable industries. Since 1999, the organization has been driving GaN research and innovation, offering proven GaN circuit reliability and compact, highly efficient products. Qorvo is a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. The Company remains the only GaN supplier to achieve Manufacturing Readiness Level (MRL) 9. Qorvo IDP drives the innovation of GaN products for next-generation systems – from DC through Ka-band – that offer robust performance, low maintenance and long operational lifetimes.